Ion-assisted PLD System

  • Pioneer 180 ion-assisted pulsed laser deposition (PLD) system

  • Ion-assisted PLD experimental setup

  • RHEED data of biaxially-textured MgO films on amorphous Si3N4/Si

Effect of Ion-assisted PLD technique on filmsion-assisted - experimental configuration thumbnailion assisted pld - mgo film thumbnail imagePhi-scan data of biaxially textured YBCO films on flexible, polycrystalline YSZ substrates


  • Stand-alone turn-key Ion-assisted PLD System.
  • Deposition of biaxially textured templates on amorphous and polycrystalline substrates.
  • Deposition of epitaxial films, multilayer heterostructures and Superlattices.
  • Deposition of textured MgO films using RHEED diagnostics.
  • Oxygen compatibility for oxide film depositions.


Neocera Ion-assisted PLD Systems are used to create biaxially textured templates (films) on amorphous or polycrystalline substrates by optimizing PLD film deposition rate and ion etch rate. Biaxial texturing is normally carried out at room temperature, facilitating the use of many substrates that otherwise do not permit high quality film growth. Yttria-stabilized Zirconia (YSZ) and related materials, and Magnesium Oxide (MgO) are among the most common materials used for texturing. Originally proposed for depositing biaxially textured high-temperature superconducting YBCO films on metallic substrates, ion-assisted PLD can be extended to many technologically important substrates where surface texturing is critically important for applications. After depositing biaxially textured templates, the active device layers such as YBCO, PZT, CIGS etc can be deposited at elevated temperatures as determined by the application. Ion-assisted PLD can be viewed as a method for developing smart interfaces between the substrate and the active film when the available deposition parameter space is not sufficient. In many applications, the film substrate combination is critical for device applications. However, if the chosen substrate does not allow high quality film growth, it may be necessary to develop a smart interface that will overcome the structural and chemical incompatibilities of the substrate. Ion-assisted PLD can create an interface of an oxide or a metal either through altering the nucleation process or through growth kinetics.

Subtrate size
2" diameter standard (4" and 6" custom)
Deposition chamber size
12 and 18-inch in diameter
Base vacuum
5x10-7 Torr standard; 5x10-9 Torr with UHV upgrade
Substrate temperature
950° C (conductive); 850 °C (radiative)
Multi-target carousel
6 x 1-inch or 3 x 2-inch
Mass flow controllers (MFC)
One MFC for oxygen and one MFC for Argon standard
Ion source
DC Kaufman-type
1 cm - 4 cm diameter
Beam voltage
1000 eV (max)
Beam current
60-100 mA (max)
Argon pressure
~0.5 mTorr
Argon flow rate
~5 sccm
Ion incidence angle
45° - 55° with respect to substrate normal